The staff of RTU MIREA congratulates Alexander Sergeevich Sigov, President of the University, on his birthday

Dear Alexander Sergeevich!

Please accept the most sincere and heartfelt congratulations on your birthday from our RTU MIREA team!

Largely due to your experience, competence and energy, our University is developing dynamically and multiplying its wonderful traditions.

Your contribution to the research and introduction into the Russian industry of a new class of dielectric materials to form dielectric layers of multilevel wiring of integrated circuits is invaluable. Under your leadership, a new direction has been created – active dielectrics for an electronic component base, radiation-resistant high-speed memory devices, microelectromechanical systems have been developed and are being designed, ferroelectric memory devices and nano heterostructures for photonics devices have been manufactured for the first time in Russia, fundamental research is underway on the properties of heterostructures based on ferroic films, and processes of self-organization in ordered structures for advanced nano-electronic devices are researched and studied.

Thanks to your efforts, RTU MIREA provides active support to young scientists, actively develops the research infrastructure and maintains the leading position of the University in Russian and international rankings.

On your birthday, we wish you good health, the implementation of all your plans and undertakings, the support of colleagues, energy and optimism, further achievements in the field of scientific and pedagogical activity!

Alexander Sergeevich Sigov (b. May 31, 1945) is a Soviet and Russian scientist, honorary professor and doctor of a number of domestic and foreign universities and research centers, honored worker of science of Russia, academician of the Russian Academy of Sciences, president of RTU MIREA.

Member of the Bureau of the Division of Nanotechnology and Information Technology of the Russian Academy of Sciences, Member of the Scientific Council under the Security Council of the Russian Federation, Chairman of the Section of Physics of Ferroelectrics and Dielectrics, Member of the Bureau of the Joint Scientific Council of the Russian Academy of Sciences on Condensed Matter Physics, Member of the Bureau of the Council “Scientific Basis for Building Computing, Telecommunication and Location Systems”, member of a number of Boards of the Ministry of Education and Science of Russia.

Scientific Secretary of the UNESCO Commission on Nanoscience and Nanotechnology, member of the European Physical Society, member of the International Association of specialists in the field of technology of the Institute of Electrical and Electronics Engineers, member of the Institute of Engineering and Technology (IET), member of the Institute of Electrical Engineers (England).

Alexander Sergeevich Sigov was born on May 31, 1945 in Stalino (now Donetsk).

In 1962, he finished with a gold medal a secondary school in Kyiv, in 1968, he graduated with honors from the Faculty of Physics of the Moscow State University named after M.V. Lomonosov, the Department of Quantum Theory, and entered the graduate school.

The whole working career of A.S. Sigov since 1972 has been associated with MIREA.

From 1985 to 1998, he was Head of the Faculty of Electronics and Optoelectronic Engineering.

In 1998, he took the position of Rector of the University.

Since 2013, Alexander Sergeevich has been President of RTU MIREA. Apart from that, since 1989, he has been Head of the Department of Nanoelectronics (formerly, the Department of Condensed Matter Physics) of RTU MIREA.

In 2006, he was elected corresponding member of the Russian Academy of Sciences, in 2011 – Academician of the Russian Academy of Sciences (Department of Nanotechnologies and Information Technologies).

Academic career

Alexander Sergeevich Sigov is a specialist in solid state physics, solid state electronics and physical materials science, element base of information systems. His academic interests include the study of the physical properties of systems with reduced dimensionality and/or structural disorder and the creation on their basis of functional devices of nano-, microelectronics and radio photonics.

In 1972, he defended his thesis “Static and dynamic properties of cross-linked domain walls in thin ferromagnetic films” for the degree of Candidate of Sciences; in 1985 – his thesis “Influence of defects on the physical properties of crystals near structural and magnetic phase transitions” for the degree of Ph.D. doctorate degrees.

The main achievements of A.S. Sigov in science and research include:

•  creation of a new direction – active dielectrics for electronic component base (radiation-resistant high-speed memory devices (MEDs), microelectromechanical systems have been developed and are being designed;

• research and introduction into the industry of a new class of dielectric materials for the formation of dielectric layers of multilevel wiring of integrated circuits;

• fundamental research on the properties of heterostructures based on ferroic films, the role of various types of defects and self-organization processes in ordered structures for promising nano-electronic devices, including systems with phase transformations, giant magnetoresistance, bi-stability (the results were used to create magnetic storage devices, magnetic field sensors, integrated memory).

Under his academic supervision, 19 qualifying papers for the degree of Candidate of Sciences and 12 for the degree of Doctor of Sciences have been defended.

Over 300 academic papers, 19 monographs and textbooks, 37 inventions authored by Alexander Sergeevich have been published. Among the monographs, specialists highlight the works listed below: “Defects and Structural Phase Transitions”, “Influence of Single-Ion Anisotropy on the Exchange Bias In “Ferromagnet-Antiferromagnet” System”, “Nanoelectronics. Encyclopedia of life support systems”, “Multilayer magnetic nanostructures. Nanoscience and nanotechnologies. Encyclopedia of Life Support Systems”, “Theory of ferromagnetic-antiferromagnetic interface coupling”, “Frustrated magnetic nanostructures”.

He is Editor-in-chief of a number of Russian scientific journals (“Electronics”, “Nanomaterials and Nanostructures”, “Russian Technological Journal”), deputy editor-in-chief of international scientific journals (“IntegratedFerroelectrics”, “Ferroelectrics”), is member of the editorial boards and boards of journals “Proceedings of the Russian Academy of Sciences (physical series), Microsystem Technology, Engineering Education, Photonics, etc.

Public activity

In 2004, Alexander Sergeevich organized the Interuniversity Literary Forum. N.S. Gumilyov “The Illuminated Word” (“Osiyannoye Slovo”) which has been held annually since then.

In an interview to Studenchesky Meridian (Student Meridian) magazine, he noted: “Higher education is not only about producing class specialists, it is about educating intelligent, comprehensively educated people. I am sure that neither an engineer, nor a scholar can develop normally without Art in the broad sense of the word. For me personally, this undertaking opens up new opportunities for communication with creative people and introduces additional “elements of beauty” into life.”

Alexander Sergeevich was awarded the Order of Honor, the Order of Merit for the Fatherland, 4th class, and medals; UNESCO Medal and Diploma “For Contribution to the Development of Nanoscience and Nanotechnologies”. He was awarded the badge “Honorary Worker of Higher Professional Education of the Russian Federation”.

He is laureate of the State Prize of the Russian Federation, the Prize of the Government of the Russian Federation in education and two prizes of the Government of the Russian Federation in the field of science and technology.